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Please use this identifier to cite or link to this item: http://hdl.handle.net/11178/8233

Title: Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs
Authors: Murakami, Eiichi
Okamoto, Mitsuo
Issue Date: Mar-2021
Publisher: IEEE
URI: http://hdl.handle.net/11178/8233
ISSN: 00189383
Rights: Copyright © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Appears in Collections:3 理工学部(Faculty of Science and Engineering)

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